Coherent, atomically thin transition-metal dichalcogenide superlattices with engineered strain
نویسندگان
چکیده
منابع مشابه
Optoelectronic Devices Based on Atomically Thin Transition Metal Dichalcogenides
We review the application of atomically thin transition metal dichalcogenides in optoelectronic devices. First, a brief overview of the optical properties of two-dimensional layered semiconductors is given and the role of excitons and valley dichroism in these materials are discussed. The following sections review and compare different concepts of photodetecting and light emitting devices, nano...
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Two-dimensional sheets of transition metal dichalcogenides are an emerging class of atomically thin semiconductors that are considered to be "air-stable", similar to graphene. Here we report that, contrary to current understanding, chemical vapor deposited transition metal dichalcogenide monolayers exhibit poor long-term stability in air. After room-temperature exposure to the environment for s...
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This special issue is about two-dimensional transitionmetal dichalcogenides (2DTMDs), a family of materials consisting of over 40 compounds with the generalized formula of MX2, where M is a transition metal typically from groups 4–7, and X is a chalcogen such as S, Se or Te. Bulk TMDs have been widely studied over several decades because it is possible to formulate compounds with disparate elec...
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Controlling the bandstructure through local-strain engineering is an exciting avenue for tailoring optoelectronic properties of materials at the nanoscale. Atomically thin materials are particularly well-suited for this purpose because they can withstand extreme nonhomogeneous deformations before rupture. Here, we study the effect of large localized strain in the electronic bandstructure of ato...
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ژورنال
عنوان ژورنال: Science
سال: 2018
ISSN: 0036-8075,1095-9203
DOI: 10.1126/science.aao5360